light etching meaning in Chinese
光线浸蚀
Examples
- Pre - exposure bake ' s time has been extended in light etching course for favorable patterns
在光刻工艺过程中,适当延长前烘时间可得到良好的显影图案。 - P - type silicon crystal plates have been adopted in the text , which are formed mask sio2 by heat - oxygenation . and figures are diverted by normal light etching technology
本文采用p型单晶硅片,由热氧化形成sio _ 2掩膜层,标准光刻工艺进行图形转移,用koh溶液湿法刻蚀制作倒四棱锥腐蚀坑列阵。 - The silicon plates are formed reverse four wimble array in koh solution by wet - etching technology . then the electrochemical etching experiments are done in three poles electrobath . and some technology questions such as heat oxygenation , light etching , wet etching and electrochemical etching have been analyzed . at the same time sample appearances are analyzed by scanning electron microscope . according to current burst model theory , the electrochemical deep holes etching mechanism are analyzed
在三极电解槽中,进行了电化学深刻蚀的探索性实验。对氧化、光刻、湿法刻蚀和电化学刻蚀中的工艺问题进行了初步的理论和实验研究,同时,采用sem对实验样品进行了形貌分析,并采用电流突破模型对电化学深孔刻蚀机理进行了理论分析。